• XRD doping control of light-emitting cBN with a large size mismatch between the dopant and intrinsic atoms   [CET 2016]
  • Author(s)
  • Elena Shishonok
  • Cubic boron nitride (cBN) as the outstanding representative of the family of semiconducting wide bandgap nitrides and the closest analogue of diamond, is produced and investigated. XRD method of doping control of cBN as doped with impurities of large atomic sizes, is suggested. The larger an atomic size mismatch between doping and intrinsic atoms of a semiconductor’s crystal lattice the stronger its response through own strains and distortions. The distortions are expected to be notable in the case of the smallest intrinsic atoms of cBN and diamond. The data of XRD (CuKα) analysis of the light-emitting cBN in form of the cBN:RE single phase micropowders, doped with various rare-earth elements (RE) in different concentrations under high pressure conditions, are represented. The cBN:RE micropowders showed discrete photoluminescence spectra in IR-, red and green spectral ranges which are attributed to the intra-electronic transitions of RE3+ ions, located in cBN crystal lat-tice. The locations of the RE3+ ions in cBN crystal lattice are discussed. Extra-splits (as the additional ones to the α1-α2-splits on CuKα) of basic peaks for cBN in XRD patterns of the cBN:RE, were discov-ered and analyzed using appropriate computer programs. As established, crystal lattice of cBN due to incorporation of RE3+ ions in dependence on the ions’ size and their concentrations in cBN, is non-uniformly and controllably distorted. Results of the present work can be useful to manufacture cBN with predictable functional properties, as well as for in situ doping control of cBN and diamond.
  • XRD doping control, light-emitting cBN, dopant, intrinsic atoms
  • References

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