• OpenAccess
  • A High Power-Added-Efficiency 2.5-GHz Class-F Power Amplifier Using 0.5 μm GaN on SiC HEMT Technology  [ICMTT 2016]
  • DOI: 10.4236/jcc.2016.43011   PP.74 - 78
  • Author(s)
  • Chia-Han Lin, Hsien-Chin Chiu, Min-Li Chou, Hsiang-Chun Wang, Ming-Feng Huang
  • This paper proposed the high-frequency, multi-harmonic-controlled, Class-F power amplifier (PA) implemented with 0.5 μm GaN Hetrojunction Electron Mobility Transistor (HEMT). For PA design at high frequencies, parasitics of a transistor significantly increase the difficulty of harmonic manipulation, compared to low-frequency cases. To overcome this issue, we propose a novel design methodology based on a band-reject, low-pass, output matching network, which is realized with passive components. This network provides optimal fundamental impedance and allows harmonic control up to the third order to enable an efficient Class-F behavior. The implemented PA exhibits performance at 2.5 GHz with a 50% PAE, 14 dB gain, and 10 W output power.

  • GaN, High Power, Class-F
  • References
  • [1]
    Chen, K. and Peroulis, D. (2013) A 3.1-GHz Class-F Power Amplifier With 82% Power-Added-Efficiency. IEEE Mi-crowave and Wireless Components Letters, 23, 436-438.
    Kalim, D., Pozdniakov, D. and Negra, R. (2012) A 3.37 GHz Class-F?1 Power Amplifier with 77% PAE in GaN HEMT Technology. Ph.D. Research in Mcroelectronics and Electronics (PRIME), 1-4.
    Hwang, T., Lin, J., Azadet, K., Wilson, R.S., Kiss, P., Abdelli, S. and Laturell, D. (2013) Class-F Power Amplifier with 80.1% Maximum PAE at 2 GHzJor Cellular Basestation Applications. IEEE 14th Annual on Wireless and Microwave Technology Conference (WAMICON), 1-3.
    Thian, M., Barakat, A. and Fusco, V. (2015) High-Efficiency Harmoic-Peaking Class-EF Power Amplifiers with Enhanced Maximum Operating Frequency. IEEE Transactions on Microwave Theory and Techniques, 63, 659-671.

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